Determination of flux ionization fraction using a quartz crystal microbalance and a gridded energy analyzer in an ionized magnetron sputtering system

نویسندگان

  • K. M. Green
  • D. B. Hayden
  • D. R. Juliano
  • D. N. Ruzic
چکیده

Related Articles On the density of states of germanium telluride J. Appl. Phys. 112, 113714 (2012) Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices Appl. Phys. Lett. 101, 232907 (2012) Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers J. Appl. Phys. 112, 113511 (2012) Improvement of (004) texturing by slow growth of Nd doped TiO2 films J. Appl. Phys. 112, 113505 (2012) Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering J. Appl. Phys. 112, 114302 (2012)

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Flux and energy analysis of species in hollow cathode magnetron ionized physical vapor deposition of copper.

To meet the stringent requirements of interconnect metallization for sub-32 nm technologies, an unprecedented level of flux and energy control of film forming species has become necessary to further advance ionized physical vapor deposition technology. Such technology development mandates improvements in methods to quantify the metal ion fraction, the gas∕metal ion ratio, and the associated ion...

متن کامل

Enhancement of aluminum oxide physical vapor deposition with a secondary plasma

Reactive sputtering of aluminum oxide in a planar magnetron system is conducted with a mixture of O and Ar reacting with 2 and bombarding an aluminum target. The aluminum target is powered by a pulsed directed current (DC) bias which functions to discharge the accumulated ions on the insulating AlO film surface during the positive duty cycle and suppresses arc formation. x A seven-turn helical ...

متن کامل

Helicon plasma source for ionized physical vapor deposition

A helicon antenna that sits remotely outside the vacuum system is attached to a magnetron sputtering system. This increases the electron temperature, which increases the ionization of the sputter flux for achieving ionized physical vapor deposition (IPVD). There are no shadowing and contamination problems, unlike other IPVD devices with immersed coils, since the helicon antenna is outside the v...

متن کامل

Development and characterization of a secondary RF plasma-assisted closed-field dual magnetron sputtering system for optical coatings on large-area substrates

An RF-assisted closed-field dual magnetron sputtering system was developed to characterize the plasma and the ionization fraction of sputtered material to provide a suitable system for depositing optical thin films on large-area substrates at low temperatures (<130 ◦C). The ‘prototype’ system consists of dual 76 mm dc magnetrons operated at both balanced and unbalanced (closed-field) configurat...

متن کامل

An rf sustained argon and copper plasma for ionized physical vapor deposition of copper

Langmuir probe, optical emission spectroscopy, and biased quartz crystal microbalance measurements were used to investigate an argon and copper plasma used for ionized physical vapor deposition of copper. Copper vapor generated by a magnetron sputter discharge is ionized upon passing through an argon discharge excited by an internal rf induction antenna. Argon plasma characteristics such as ele...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2012